N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 30V Drain to Source Breakdown Voltage and 2.5A Continuous Drain Current. Offers a low Drain-source On Resistance of 70mR (max) and 118mR (max). Operates with a Gate to Source Voltage up to 20V and a Threshold Voltage of 2.5V. Packaged in a TSMT3 (TO-236-3) surface-mount package, this RoHS compliant component has a maximum power dissipation of 1W and a wide operating temperature range of -55°C to 150°C.
PackageTO-236-3
Current Rating2.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm RSR025N03TL technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
830mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
118MR
Dual Supply Voltage
30V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
165pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
2.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
6ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Rohm RSR025N03TL Datasheet
Download the complete datasheet for Rohm RSR025N03TL to view detailed technical specifications.
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