N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 240mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. Packaged in a TUMT3, 3-pin SMD/SMT surface mount package, supplied on tape and reel.
PackageSMD/SMT
Current Rating1.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm RTF015N03TL technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
1.5A
Current Rating
1.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
240MR
Fall Time
9ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
80pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
800mW
Radiation Hardening
No
Rds On Max
240mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
7ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Rohm RTF015N03TL Datasheet
Download the complete datasheet for Rohm RTF015N03TL to view detailed technical specifications.
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