P-channel JFET for small signal applications. Features 200mA continuous drain current (ID) and a drain-source breakdown voltage of -20V. Offers a low drain-source on-resistance (Rds On) of 1.5 Ohms. Surface mountable in a SOT-723 package, this silicon FET boasts a 6ns fall time and 9ns turn-on delay. RoHS compliant and lead-free.
PackageSOT-723
Current Rating-200mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Rohm RTM002P02T2L technical specifications.
General
Package/Case
SOT-723
Continuous Drain Current (ID)
200mA
Current Rating
-200mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
1.5R
Fall Time
6ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
50pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Max Power Dissipation
150mW
Mount
Surface Mount
Nominal Vgs
-700mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
150mW
Radiation Hardening
No
Rds On Max
1.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-700mV
Turn-Off Delay Time
35ns
Turn-On Delay Time
9ns
DC Rated Voltage
-20V
Compliance
RoHS
Compliant
Datasheet
Rohm RTM002P02T2L Datasheet
Download the complete datasheet for Rohm RTM002P02T2L to view detailed technical specifications.
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