ROHM

RUE003N02TL

Datasheet

N-Channel JFET, 20V, 0.3A ID, 1R RDS(on), SOT-23

Rohm

RUE003N02TL

Name: RUE003N02TL Rohm
Brand: Rohm
SKU: RUE003N02TL

N-Channel JFET, 20V, 0.3A ID, 1R RDS(on), SOT-23

N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features 20V Drain to Source Breakdown Voltage (Vdss) and 300mA Continuous Drain Current (ID). Offers 1 Ohm Drain to Source Resistance (Rds On Max) and a 300mV Threshold Voltage. Operates within a -55°C to 150°C temperature range with 150mW Power Dissipation. Surface mountable in an EMT3 package, measuring 1.6mm x 0.8mm x 0.7mm.

MountingSurface Mount

PolarityN-CHANNEL

Power150mW

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Technical Specifications

Rohm RUE003N02TL technical specifications.

General

Continuous Drain Current (ID)	300mA
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	1R
Drain to Source Voltage (Vdss)	20V
Fall Time	10ns
Gate to Source Voltage (Vgs)	8V
Height	0.7mm
Input Capacitance	25pF
Lead Free	Lead Free
Length	1.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150mW
Mount	Surface Mount
Nominal Vgs	300mV
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	150mW
Radiation Hardening	No
Rds On Max	1R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	300mV
Turn-Off Delay Time	15ns
Turn-On Delay Time	5ns
Width	0.8mm