N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features 20V Drain to Source Breakdown Voltage (Vdss) and 300mA Continuous Drain Current (ID). Offers 1 Ohm Drain to Source Resistance (Rds On Max) and a 300mV Threshold Voltage. Operates within a -55°C to 150°C temperature range with 150mW Power Dissipation. Surface mountable in an EMT3 package, measuring 1.6mm x 0.8mm x 0.7mm.
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Rohm RUE003N02TL technical specifications.
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.7mm |
| Input Capacitance | 25pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Nominal Vgs | 300mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 1R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 300mV |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 5ns |
| Width | 0.8mm |
| RoHS | Compliant |
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