N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 4A continuous drain current. This single quad drain device utilizes silicon for its construction, offering a maximum drain-source on-resistance of 50 mOhm at 10V. Packaged in a 6-pin TSMT (SOT) lead-frame SMT with gull-wing leads, it measures 3mm (L) x 1.8mm (W) x 0.95mm (H) with a 0.95mm pin pitch. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1250mW.
Checking distributor stock and pricing after the page loads.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | TSMT |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3(Max) |
| Package Width (mm) | 1.8(Max) |
| Package Height (mm) | 0.95(Max) |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 50@10VmOhm |
| Typical Gate Charge @ Vgs | 3.3@5V|6.5@10VnC |
| Typical Gate Charge @ 10V | 6.5nC |
| Typical Input Capacitance @ Vds | 180@10VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
