P-channel silicon JFET for small signal applications. Features 12V drain-source voltage (Vdss) and 2A continuous drain current (ID). Offers low 75mΩ drain-source resistance and 105mΩ max Rds(on). Operates from -55°C to 150°C with 800mW max power dissipation. Packaged in a surface-mount SOT-23-6, this RoHS compliant component has a 10ns turn-on delay and 65ns turn-off delay.
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Rohm RZF020P01TL technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 105MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.77mm |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 10ns |
| Width | 1.7mm |
| RoHS | Compliant |
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