P-channel silicon JFET for small signal applications. Features 12V drain-source voltage (Vdss) and 2A continuous drain current (ID). Offers low 75mΩ drain-source resistance and 105mΩ max Rds(on). Operates from -55°C to 150°C with 800mW max power dissipation. Packaged in a surface-mount SOT-23-6, this RoHS compliant component has a 10ns turn-on delay and 65ns turn-off delay.
PackageSOT-23-6
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Rohm RZF020P01TL technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
2A
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
105MR
Fall Time
35ns
Gate to Source Voltage (Vgs)
10V
Height
0.77mm
Input Capacitance
770pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
105mR
RoHS Compliant
Yes
Turn-Off Delay Time
65ns
Turn-On Delay Time
10ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Rohm RZF020P01TL Datasheet
Download the complete datasheet for Rohm RZF020P01TL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
