N-channel Silicon Carbide (SiC) Power MOSFET, enhancement mode, single element, designed for through-hole mounting. Features a maximum drain-source voltage of 1200V and a continuous drain current of 40A. Housed in a TO-247 package with 3 pins and a tab, offering a maximum power dissipation of 262W. Operating temperature range from -55°C to 175°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Rohm SCT2080KE technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.9
Package Width (mm)
5.03
Package Height (mm)
20.95
Seated Plane Height (mm)
25.27
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
1200V
Maximum Gate Source Voltage
22V
Maximum Continuous Drain Current
40A
Material
SiC
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
117@18VmOhm
Typical Gate Charge @ Vgs
106@18VnC
Typical Input Capacitance @ Vds
2080@800VpF
Maximum Power Dissipation
262000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Typical Output Capacitance
77pF
Compliance
Cage Code
S5518
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Rohm SCT2080KE Datasheet
Download the complete datasheet for Rohm SCT2080KE to view detailed technical specifications.
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