N-Channel Silicon Carbide Power MOSFET, 650V Drain-Source Voltage, 29A Continuous Drain Current, and 156mΩ Drain-Source Resistance. Features a TO-220AB package for through-hole mounting, operating from -55°C to 175°C with a maximum power dissipation of 165W. Offers fast switching characteristics with a 19ns fall time and 22ns turn-on delay. This RoHS compliant component is designed for high-performance power applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Rohm SCT2120AFC technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
29A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
650V
Fall Time
19ns
Gate to Source Voltage (Vgs)
22V
Input Capacitance
1.2nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
165W
Mount
Through Hole
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
156mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SCT2x
Threshold Voltage
4V
Turn-Off Delay Time
60ns
Turn-On Delay Time
22ns
Weight
0.211644oz
Compliance
RoHS
Compliant
Datasheet
Rohm SCT2120AFC Datasheet
Download the complete datasheet for Rohm SCT2120AFC to view detailed technical specifications.
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