N-Channel Silicon Carbide Power MOSFET, 650V Drain-Source Voltage, 29A Continuous Drain Current, and 156mΩ Drain-Source Resistance. Features a TO-220AB package for through-hole mounting, operating from -55°C to 175°C with a maximum power dissipation of 165W. Offers fast switching characteristics with a 19ns fall time and 22ns turn-on delay. This RoHS compliant component is designed for high-performance power applications.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Rohm SCT2120AFC technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 156mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SCT2x |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SCT2120AFC Datasheet
Download the complete datasheet for Rohm SCT2120AFC to view detailed technical specifications.
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