N-Channel Silicon Carbide MOSFET, TO-247 package, offering 1200V drain-source voltage and 22A continuous drain current. Features low 160mΩ drain-source on-resistance and 1.2nF input capacitance. Designed for through-hole mounting with a maximum operating temperature of 175°C and 165W power dissipation. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 27ns. RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Rohm SCT2160KEC technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
22A
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
1.2kV
Drain-source On Resistance-Max
160mR
Fall Time
27ns
Gate to Source Voltage (Vgs)
4V
Height
5.03mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Max Power Dissipation
165W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Package Quantity
360
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
208mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SCT2160KE
Threshold Voltage
4V
Turn-Off Delay Time
67ns
Turn-On Delay Time
23ns
Width
20.95mm
Compliance
RoHS
Compliant
Datasheet
Rohm SCT2160KEC Datasheet
Download the complete datasheet for Rohm SCT2160KEC to view detailed technical specifications.
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