N-Channel Silicon Carbide MOSFET, 1200V Vdss, 14A continuous drain current, and 0.364 ohm Rds On Max. Features a TO-247 package for through-hole mounting, with a maximum power dissipation of 108W and an operating temperature range of -55°C to 175°C. Includes input capacitance of 667pF and fast switching times with a 29ns fall time. RoHS compliant.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Rohm SCT2280KEC technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
14A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
1.2kV
Drain-source On Resistance-Max
280mR
Fall Time
29ns
Gate to Source Voltage (Vgs)
22V
Height
5.03mm
Input Capacitance
667pF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
108W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
360
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
364mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
SCT2280KE
Threshold Voltage
4V
Turn-Off Delay Time
47ns
Turn-On Delay Time
19ns
Width
20.95mm
Compliance
RoHS
Compliant
Datasheet
Rohm SCT2280KEC Datasheet
Download the complete datasheet for Rohm SCT2280KEC to view detailed technical specifications.
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