N-Channel Silicon Carbide MOSFET featuring 1200V drain-source voltage and 10A continuous drain current. This power field-effect transistor offers a maximum on-resistance of 585mΩ and a typical on-resistance of 450mΩ. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 85W. Key switching characteristics include a turn-on delay of 19ns and a fall time of 34ns.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Rohm SCT2450KEC technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
10A
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
1.2kV
Drain-source On Resistance-Max
585mR
Fall Time
34ns
Gate to Source Voltage (Vgs)
22V
Height
5.03mm
Input Capacitance
463pF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
360
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
585mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
38ns
Turn-On Delay Time
19ns
Width
20.95mm
Compliance
RoHS
Compliant
Datasheet
Rohm SCT2450KEC Datasheet
Download the complete datasheet for Rohm SCT2450KEC to view detailed technical specifications.
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