N-Channel Silicon Carbide MOSFET featuring 1200V drain-source voltage and 10A continuous drain current. This power field-effect transistor offers a maximum on-resistance of 585mΩ and a typical on-resistance of 450mΩ. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 85W. Key switching characteristics include a turn-on delay of 19ns and a fall time of 34ns.
Sign in to ask questions about the Rohm SCT2450KEC datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm SCT2450KEC technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 585mR |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 22V |
| Height | 5.03mm |
| Input Capacitance | 463pF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 360 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 585mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 19ns |
| Width | 20.95mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm SCT2450KEC to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
