N-channel Silicon Carbide MOSFET featuring 1700V breakdown voltage and 3.7A continuous drain current. This single-element, 3-terminal power field-effect transistor offers a low on-resistance of 1.5 ohms. Designed for high-performance applications, it is housed in a TO-3PFM package and adheres to ROHS compliance.
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| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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