N-channel Silicon Carbide MOSFET featuring 1700V breakdown voltage and 3.7A continuous drain current. This single-element, 3-terminal power field-effect transistor offers a low on-resistance of 1.5 ohms. Designed for high-performance applications, it is housed in a TO-3PFM package and adheres to ROHS compliance.
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Technical Specifications
Rohm SCT2H12NZGC11 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Rohm SCT2H12NZGC11 Datasheet
Download the complete datasheet for Rohm SCT2H12NZGC11 to view detailed technical specifications.
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