The SH8K2TB1 is a 2 N-Channel MOSFET from Rohm with a maximum operating temperature of 150°C. It has a maximum power dissipation of 2W and a continuous drain current of 6A. The device is packaged in a SOP package and is designed for surface mount applications. The MOSFET has a drain to source breakdown voltage of 30V and a drain to source resistance of 33mR. It also features an input capacitance of 520pF and a maximum operating temperature of 150°C.
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Rohm SH8K2TB1 technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 520pF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 30mR |
| RoHS | Compliant |
Download the complete datasheet for Rohm SH8K2TB1 to view detailed technical specifications.
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