N-channel enhancement mode power MOSFET featuring a dual dual-drain configuration. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 7A. Housed in an 8-pin SOP package with gull-wing leads, it boasts a low drain-source on-resistance of 24mOhm at 10V. Operating across a temperature range of -55°C to 150°C, this plastic lead-frame SMT component is designed for efficient power management.
PackageSOP
MountingSurface Mount
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Technical Specifications
Rohm SH8K3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
3.9
Seated Plane Height (mm)
1.75
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
7A
Maximum Drain Source Resistance
24@10VmOhm
Typical Gate Charge @ Vgs
8.4@5VnC
Typical Input Capacitance @ Vds
600@10VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S5518
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Rohm SH8K3 Datasheet
Download the complete datasheet for Rohm SH8K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.