60V N-Channel MOSFET, 4.5A continuous drain current, featuring 55mR drain-to-source resistance. Surface mountable in an SOP package, this component offers a maximum power dissipation of 2W and an input capacitance of 500pF. Ideal for applications requiring 60V breakdown voltage and operation up to 150°C.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Rohm SH8K32TB1 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | 2 N-Channel |
| Input Capacitance | 500pF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 65mR |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SH8K32TB1 Datasheet
Download the complete datasheet for Rohm SH8K32TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.