Rohm
SP8J1TB
Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
PackageSOIC
Current Rating-5A
MountingSurface Mount
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Technical Specifications
Rohm SP8J1TB technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Current Rating | -5A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SP8J1TB Datasheet
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