N-Channel Power MOSFET, SOP-8 package, offering 30V drain-source breakdown voltage and 5A continuous drain current. Features low 51mΩ Rds(on) for efficient power switching. Operates with a 20V gate-source voltage and exhibits fast switching speeds with 6ns turn-on and 22ns turn-off delays. Maximum power dissipation is 2W, suitable for surface mount applications.
PackageSOP
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm SP8K1TB technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 51mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SP8K1TB Datasheet
Download the complete datasheet for Rohm SP8K1TB to view detailed technical specifications.
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