N-Channel Power MOSFET, SOP-8 package, offering 30V drain-source breakdown voltage and 5A continuous drain current. Features low 51mΩ Rds(on) for efficient power switching. Operates with a 20V gate-source voltage and exhibits fast switching speeds with 6ns turn-on and 22ns turn-off delays. Maximum power dissipation is 2W, suitable for surface mount applications.
PackageSOP
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Rohm SP8K1TB technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
51mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
230pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
51mR
RoHS Compliant
Yes
Turn-Off Delay Time
22ns
Turn-On Delay Time
6ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Rohm SP8K1TB Datasheet
Download the complete datasheet for Rohm SP8K1TB to view detailed technical specifications.
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