The SP8K32TB1 is a 2 N-Channel MOSFET from Rohm, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.5A and a drain to source voltage of 60V. The device is packaged in a SOIC package and is suitable for surface mount applications. The SP8K32TB1 has a maximum power dissipation of 2W and a nominal Vgs of 2.5V.
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Rohm SP8K32TB1 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| FET Type | 2 N-Channel |
| Input Capacitance | 500pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Packaging | Cut Tape |
| Power Dissipation | 2W |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| Resistance | 0.046R |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| RoHS | Compliant |
Download the complete datasheet for Rohm SP8K32TB1 to view detailed technical specifications.
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