N-Channel Power MOSFET, SOP package, featuring 30V Drain to Source Breakdown Voltage and 9A Continuous Drain Current. Offers low 17mΩ Drain to Source Resistance at a nominal 2.5V Gate to Source Voltage. Designed for surface mount applications with a maximum power dissipation of 2W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 22ns fall time.
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Rohm SP8K4FU6TB technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 22ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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