N-Channel Power MOSFET, SOP package, featuring 30V Drain to Source Breakdown Voltage and 9A Continuous Drain Current. Offers low 17mΩ Drain to Source Resistance at a nominal 2.5V Gate to Source Voltage. Designed for surface mount applications with a maximum power dissipation of 2W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with a 10ns turn-on delay and 22ns fall time.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Rohm SP8K4FU6TB technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
22ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.19nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2.5V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
17mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.5V
Turn-Off Delay Time
55ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Rohm SP8K4FU6TB Datasheet
Download the complete datasheet for Rohm SP8K4FU6TB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.