N and P-Channel MOSFET transistor in SOP package, suitable for surface mount applications. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 4.5A. Offers a low on-resistance of 51mR at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes a turn-off delay time of 60ns and a fall time of 25ns.
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Rohm SP8M3FU6TB technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
51mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
25ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
230pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2.5V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
51mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.5V
Turn-Off Delay Time
60ns
Compliance
RoHS
Compliant
Datasheet
Rohm SP8M3FU6TB Datasheet
Download the complete datasheet for Rohm SP8M3FU6TB to view detailed technical specifications.
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