Rohm
SP8M51TB1
Power Field-Effect Transistor, 3A I(D), 100V, 0.19ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Power Field-Effect Transistor, 3A I(D), 100V, 0.19ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Rohm SP8M51TB1 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | N and P-Channel |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SP8M51TB1 Datasheet
Download the complete datasheet for Rohm SP8M51TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.