Rohm
SP8M51TB1
Power Field-Effect Transistor, 3A I(D), 100V, 0.19ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Rohm SP8M51TB1 technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
FET Type
N and P-Channel
Lead Free
Lead Free
Max Operating Temperature
150°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Rohm SP8M51TB1 Datasheet
Download the complete datasheet for Rohm SP8M51TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.