Rohm
SP8M6TB
Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP8, 8 PIN
PackageSOIC
Current Rating5A
MountingSurface Mount
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Technical Specifications
Rohm SP8M6TB technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.5A
Current Rating
5A
Drain to Source Voltage (Vdss)
30V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
230pF
Lead Free
Lead Free
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
51mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Rohm SP8M6TB Datasheet
Download the complete datasheet for Rohm SP8M6TB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.