Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP8, 8 PIN
Rohm SP8M6TB technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 51mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
