
The SP8M7TB is a dual N and P-channel FET from Rohm, packaged in a SOIC case and designed for surface mount applications. It can handle a maximum drain current of 7A and a maximum drain to source voltage of 30V, with a maximum power dissipation of 2W. The device has an input capacitance of 230pF and a maximum on-resistance of 51mR. It is lead free and RoHS compliant, making it suitable for use in a variety of applications.
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Rohm SP8M7TB technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 51mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Rohm SP8M7TB to view detailed technical specifications.
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