N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 2.5A continuous drain current. This dual dual drain transistor is housed in an 8-pin TSST lead-frame SMT package with a 0.65mm pin pitch, measuring 3.10mm x 1.70mm x 0.80mm. Key electrical characteristics include a maximum drain-source on-resistance of 90mΩ at 4.5V gate-source voltage and a typical gate charge of 3.2nC. Operating across a temperature range of -55°C to 150°C, this surface-mount component offers a maximum power dissipation of 1250mW.
Rohm TT8K2TR technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TSST |
| Package/Case | TSST |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.10(Max) |
| Package Width (mm) | 1.70(Max) |
| Package Height (mm) | 0.80(Max) |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 2.5A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 180@10VpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
