N-channel/P-channel enhancement mode silicon power MOSFETs with 30V/20V drain-source voltage and 2.5A continuous drain current. Features 8-pin TSST lead-frame SMT package with flat leads, 0.65mm pin pitch, and surface mount capability. Maximum power dissipation is 1250mW, with operating temperatures from -55°C to 150°C.
Rohm TT8M2TR technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TSST |
| Package/Case | TSST |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.10(Max) |
| Package Width (mm) | 1.70(Max) |
| Package Height (mm) | 0.80(Max) |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30@N Channel|20@P ChannelV |
| Maximum Gate Source Voltage | ±12@N Channel|±10@P ChannelV |
| Maximum Continuous Drain Current | 2.5A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]@N Channel|[email protected]@P ChannelmOhm |
| Typical Gate Charge @ Vgs | [email protected]@N Channel|[email protected]@P ChannelnC |
| Typical Input Capacitance @ Vds | 180@10V@N Channel|1270@10V@P ChannelpF |
| Maximum Power Dissipation | 1250mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
