N-channel silicon JFET for small signal applications. Features 50V drain-to-source voltage and 200mA continuous drain current. Offers low on-resistance of 2.2 Ohms, with turn-on delay of 4ns and turn-off delay of 15ns. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 120mW. Surface mountable in a 6-pin UMT6 package, this lead-free and RoHS compliant component is suitable for demanding electronic designs.
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Rohm UM6K33NTN technical specifications.
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 55ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 25pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 4ns |
| RoHS | Compliant |
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