NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 320MHz. Packaged in a 6-pin SC-88 surface-mount configuration, this silicon transistor operates from -55°C to 150°C and is RoHS compliant.
PackageSC
Voltage Rating30V
MountingSurface Mount
PolarityNPN, N-CHANNEL
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Technical Specifications
Rohm UMF9NTR technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 320MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 500mA |
| Max Output Voltage | 12V |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, N-CHANNEL |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 320MHz |
| Voltage Rating | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm UMF9NTR Datasheet
Download the complete datasheet for Rohm UMF9NTR to view detailed technical specifications.
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