NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 320MHz. Packaged in a 6-pin SC-88 surface-mount configuration, this silicon transistor operates from -55°C to 150°C and is RoHS compliant.
PackageSC
Voltage Rating30V
MountingSurface Mount
PolarityNPN, N-CHANNEL
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Technical Specifications
Rohm UMF9NTR technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
100mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
12V
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
320MHz
hFE Min
270
Lead Free
Lead Free
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
500mA
Max Output Voltage
12V
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, N-CHANNEL
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
320MHz
Voltage Rating
30V
Compliance
RoHS
Compliant
Datasheet
Rohm UMF9NTR Datasheet
Download the complete datasheet for Rohm UMF9NTR to view detailed technical specifications.
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