NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and 150mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Packaged in a compact SC-88 (SOT-363) surface-mount case, this silicon transistor operates from -55°C to 150°C. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-363
Current Rating150mA
MountingSurface Mount
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Technical Specifications
Rohm UMX2NTR technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
150mA
Current Rating
150mA
Emitter Base Voltage (VEBO)
7V
Gain Bandwidth Product
180MHz
Height
0.9mm
hFE Min
120
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
180MHz
DC Rated Voltage
50V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Rohm UMX2NTR Datasheet
Download the complete datasheet for Rohm UMX2NTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.