N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount (SMD/SMT) device with a 30V Drain to Source Voltage (Vdss). Features a continuous drain current (ID) of 1A and a maximum power dissipation of 1W. Offers a drain-source on-resistance (Rds On Max) of 240mR and a gate-to-source voltage (Vgs) of -12V. Operates within a temperature range of -55°C to 150°C.
PackageSMD/SMT
Current Rating1.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Rohm US6M1TR technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
1A
Current Rating
1.4A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
280MR
Dual Supply Voltage
30V
Fall Time
10ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
-12V
Height
0.77mm
Input Capacitance
70pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
2.5V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
240mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
25ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Rohm US6M1TR Datasheet
Download the complete datasheet for Rohm US6M1TR to view detailed technical specifications.
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