Power Field-Effect Transistor, 3A I(D), 20V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DFN2020-8D, 8 PIN
Rohm UT6J3TCR1 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
