
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VMT6, 6 PIN
Rohm VT6K1T2CR technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 38ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 7.1pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
No datasheet is available for this part.