This device is an N-channel advanced power MOSFET rated for 100 V drain-source voltage and 180 A continuous drain current at 25°C. It is specified with 4.5 mΩ typical and 5.5 mΩ maximum on-resistance at 10 V gate drive and 75 A drain current. The part is supplied in a TO-263 package, supports fast switching, and is 100% avalanche tested with 625 mJ single-pulse avalanche energy. Maximum junction temperature is 175°C, and the datasheet notes lead-free green availability with RoHS compliance.
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Ruichips RU1H180S technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current | 180 @ Tc=25°CA |
| Continuous Drain Current | 127 @ Tc=100°CA |
| Pulse Drain Current | 720A |
| Drain-Source On-Resistance | 4.5 typ, 5.5 max @ VGS=10V, IDS=75AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Gate Leakage Current | ±100nA |
| Zero Gate Voltage Drain Current | 1 max @ VDS=100V, VGS=0VµA |
| Zero Gate Voltage Drain Current | 30 max @ TJ=125°CµA |
| Diode Forward Voltage | 1.3V |
| Reverse Recovery Time | 125ns |
| Reverse Recovery Charge | 167nC |
| Gate Resistance | 2Ω |
| Input Capacitance | 7200pF |
| Output Capacitance | 750pF |
| Reverse Transfer Capacitance | 430pF |
| Total Gate Charge | 145nC |
| Gate-Source Charge | 35nC |
| Gate-Drain Charge | 58nC |
| Turn-on Delay Time | 35ns |
| Turn-on Rise Time | 93ns |
| Turn-off Delay Time | 77ns |
| Turn-off Fall Time | 68ns |
| Power Dissipation | 375 @ Tc=25°CW |
| Power Dissipation | 185 @ Tc=100°CW |
| Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.4°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Single-Pulse Avalanche Energy | 625mJ |
| RoHS | Compliant |
