Samsung
CIG22B4R7MNE
Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 0.25Ohm DCR 1008 T/R
Package1008
Current Rating1A
MountingSurface Mount
Inductance4.7uH
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Technical Specifications
Samsung CIG22B4R7MNE technical specifications.
General
| Case Code (Imperial) | 1008 |
| Case Code (Metric) | 2520 |
| Package/Case | 1008 |
| Core Material | Ferrite |
| Current Rating | 1A |
| DC Current | 1A |
| DC Resistance (DCR) | 250mR |
| Depth | 2.2mm |
| Inductance | 4.7uH |
| Length | 0.098inch |
| Max Operating Temperature | 125°C |
| Military Standard | Not |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Saturation Current | 650mA |
| Series | CIG22B |
| Shielding | Shielded |
| Test Frequency | 1MHz |
| Tolerance | 20% |
| Width | 0.079inch |
Compliance
| RoHS | Compliant |
Datasheet
Samsung CIG22B4R7MNE Datasheet
Download the complete datasheet for Samsung CIG22B4R7MNE to view detailed technical specifications.
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