Samsung
CIG2MW4R7NNE
Inductor Power Chip Shielded Multi-Layer 4.7uH 30% 1MHz 1.1A 0.14Ohm DCR 0806 T/R
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Technical Specifications
Samsung CIG2MW4R7NNE technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Number of Functions | 1 |
| Package Length | 2 |
| Tolerance | 30 |
| Package Width | 1.6 |
| Package Height | 0.9 |
| Terminal Placement | DUAL ENDED |
| Inductance-Nom (L) | 4.7 |
| Inductor Type | GENERAL PURPOSE INDUCTOR |
| Shielded | YES |
| Inductor Application | POWER INDUCTOR |
| DC Resistance | 0.14 |
| Rated Current-Max | 1.1 |
| Test Frequency | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8504.50.80.00 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung CIG2MW4R7NNE Datasheet
Download the complete datasheet for Samsung CIG2MW4R7NNE to view detailed technical specifications.
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