Samsung
CIH03T4N7SNE
Inductor High Frequency Chip Multi-Layer 0.0047uH 0.3nH 100MHz 5Q-Factor Ceramic 0.2A 0.4Ohm DCR 0201 T/R
Inductance0.0047uH
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Technical Specifications
Samsung CIH03T4N7SNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0047uH |
| Tolerance | 0.3nH |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.2A |
| Max DC Resistance | 0.4Ohm |
| Minimum Quality Factor | 5 |
| Minimum Self Resonant Frequency | 5300MHz |
| Case Size | 0201 |
| Product Length | 0.63mm |
| Height | 0.33mm |
| Product Depth | 0.33mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH03T4N7SNE Datasheet
Download the complete datasheet for Samsung CIH03T4N7SNE to view detailed technical specifications.
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