Samsung
CIH05T2N4SNE
Inductor High Frequency Chip Multi-Layer 0.0024uH 0.3nH 100MHz 8Q-Factor Ceramic 0.3A 0.16Ohm DCR 0402 T/R
Inductance0.0024uH
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Technical Specifications
Samsung CIH05T2N4SNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0024uH |
| Tolerance | 0.3nH |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.3A |
| Max DC Resistance | 0.16Ohm |
| Minimum Quality Factor | 8 |
| Minimum Self Resonant Frequency | 6000MHz |
| Case Size | 0402 |
| Product Length | 1.05mm |
| Height | 0.55mm |
| Product Depth | 0.55mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH05T2N4SNE Datasheet
Download the complete datasheet for Samsung CIH05T2N4SNE to view detailed technical specifications.
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