Inductor High Frequency Chip Multi-Layer 0.0033uH 0.3nH 100MHz 8Q-Factor Ceramic 0.3A 0.19Ohm DCR 0402 T/R
Samsung CIH05T3N3SNE technical specifications.
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0033uH |
| Tolerance | 0.3nH |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.3A |
| Max DC Resistance | 0.19Ohm |
| Minimum Quality Factor | 8 |
| Minimum Self Resonant Frequency | 6000MHz |
| Case Size | 0402 |
| Product Length | 1.05mm |
| Height | 0.55mm |
| Product Depth | 0.55mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
