This high frequency chip inductor features a ceramic core material and multi-layer technology. It has an inductance of 0.0018uH with a tolerance of 0.3nH, and is tested at a frequency of 100MHz. The maximum DC current is 0.8A and the maximum DC resistance is 0.1. The inductor is available in a 0603 case size with a product length of 1.75mm and a height of 0.95mm. It operates over a temperature range of -55 to 125 degrees Celsius.
Inductance0.0018uH
Quick Jump:
Technical Specifications
Samsung CIH10T1N8SNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0018uH |
| Tolerance | 0.3nH |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.8A |
| Max DC Resistance | 0.1Ohm |
| Minimum Quality Factor | 8(Typ) |
| Minimum Self Resonant Frequency | 6000MHz |
| Case Size | 0603 |
| Product Length | 1.75mm |
| Height | 0.95mm |
| Product Depth | 0.95mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH10T1N8SNE Datasheet
Download the complete datasheet for Samsung CIH10T1N8SNE to view detailed technical specifications.
No datasheet is available for this part.