Samsung
CIH10T2N2SNE
Inductor High Frequency Chip Multi-Layer 0.0022uH 0.3nH 100MHz 8Q-Factor Ceramic 0.8A 0.1Ohm DCR 0603 T/R
Inductance0.0022uH
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Technical Specifications
Samsung CIH10T2N2SNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0022uH |
| Tolerance | 0.3nH |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.8A |
| Max DC Resistance | 0.1Ohm |
| Minimum Quality Factor | 8(Typ) |
| Minimum Self Resonant Frequency | 6000MHz |
| Case Size | 0603 |
| Product Length | 1.75mm |
| Height | 0.95mm |
| Product Depth | 0.95mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH10T2N2SNE Datasheet
Download the complete datasheet for Samsung CIH10T2N2SNE to view detailed technical specifications.
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