Samsung
CIH10T3N3SNC
Inductor High Frequency Chip Multi-Layer 0.0033uH 0.3nH 100MHz 10Q-Factor Ceramic 0.8A 0.12Ohm DCR 0603 T/R
Package0603
Current Rating800mA
MountingSurface Mount
Inductance3.3nH
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Technical Specifications
Samsung CIH10T3N3SNC technical specifications.
General
Package/Case
0603
Core Material
Ceramic
Current Rating
800mA
DC Current
800mA
DC Resistance (DCR)
120mR
Depth
0.95mm
Height
0.95mm
Inductance
3.3nH
Length
1.75mm
Max DC Current
800mA
Max Operating Temperature
125°C
Military Standard
Not
Min Operating Temperature
-55°C
Mount
Surface Mount
Packaging
Tape and Reel
Radiation Hardening
No
RoHS Compliant
Yes
Self Resonant Frequency
6GHz
Series
CIH10T
Shielding
Unshielded
Test Frequency
100MHz
Width
0.031inch
Compliance
RoHS
Compliant
Datasheet
Samsung CIH10T3N3SNC Datasheet
Download the complete datasheet for Samsung CIH10T3N3SNC to view detailed technical specifications.
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