The CIH10T3N3SNE is a high frequency chip inductor from Samsung, featuring a ceramic core and multi-layer technology. It has a nominal inductance of 0.0033uH and a tolerance of 0.3nH, with a maximum DC current rating of 0.8A and a maximum DC resistance of 0.12R. The inductor is designed for high frequency applications, with a minimum self resonant frequency of 6000MHz. It is available in a 0603 surface mount package and is rated for operation between -55C and 125C.
Inductance0.0033uH
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Technical Specifications
Samsung CIH10T3N3SNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0033uH |
| Tolerance | 0.3nH |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.8A |
| Max DC Resistance | 0.12Ohm |
| Minimum Quality Factor | 10(Typ) |
| Minimum Self Resonant Frequency | 6000MHz |
| Case Size | 0603 |
| Product Length | 1.75mm |
| Height | 0.95mm |
| Product Depth | 0.95mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH10T3N3SNE Datasheet
Download the complete datasheet for Samsung CIH10T3N3SNE to view detailed technical specifications.
No datasheet is available for this part.