Samsung
CIH10T6N8KBE
Inductor High Frequency Chip Multi-Layer 0.0068uH 10% 100MHz 10Q-Factor 0.3A 0.22Ohm DCR 0603 T/R
Inductor High Frequency Chip Multi-Layer 0.0068uH 10% 100MHz 10Q-Factor 0.3A 0.22Ohm DCR 0603 T/R
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Technical Specifications
Samsung CIH10T6N8KBE technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Number of Functions | 1 |
| Package Length | 1.6 |
| Tolerance | 10 |
| Package Width | 0.8 |
| Package Height | 0.8 |
| Terminal Placement | DUAL ENDED |
| Inductance-Nom (L) | 0.0068 |
| Inductor Type | GENERAL PURPOSE INDUCTOR |
| Shielded | NO |
| Inductor Application | RF INDUCTOR |
| DC Resistance | 0.22 |
| Rated Current-Max | 0.7 |
| Self Resonance Frequency | 4000 |
| Quality Factor-Min (at L-nom) | 10 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8504.50.80.00 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
No datasheet is available for this part.