Samsung
IRF840
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Technical Specifications
Samsung IRF840 technical specifications.
General
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Samsung IRF840 Datasheet
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