Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Samsung IRFP250 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
