Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Samsung IRFR9014 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
