Samsung
IRFS740A
Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
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Technical Specifications
Samsung IRFS740A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung IRFS740A Datasheet
Download the complete datasheet for Samsung IRFS740A to view detailed technical specifications.
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