DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA100,
Samsung K4B1G1646D-HCF8 technical specifications.
| Number of Terminals | 100 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B100 |
| Supply Voltage-Nom (Vsup) | 1.5 |
| Supply Current-Max | 0.31 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Standby Current-Max | 0.01 |
| Access Time-Max | 0.3 |
| Clock Frequency-Max (fCLK) | 533 |
| I/O Type | COMMON |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
