Samsung
K4B1G1646E-HCF80
DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
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Technical Specifications
Samsung K4B1G1646E-HCF80 technical specifications.
General
| Max Operating Temperature | 95 |
| Number of Terminals | 96 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B96 |
| Width | 7.5 |
| Length | 13.3 |
| Pin Count | 96 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.5 |
| Supply Voltage-Max (Vsup) | 1.575 |
| Supply Voltage-Min (Vsup) | 1.425 |
| Supply Current-Max | 0.2 |
| Number of Words | 67108864 |
| Number of Words Code | 64000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.01 |
| Access Time-Max | 0.3 |
| Clock Frequency-Max (fCLK) | 533 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.32 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung K4B1G1646E-HCF80 Datasheet
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