DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96
Samsung K4B1G1646G-BCK0 technical specifications.
| Access Time | 225ps |
| Address Bus Width | 16b |
| Package/Case | FBGA |
| Density | 1Gb |
| Max Frequency | 1.6GHz |
| Max Operating Temperature | 95°C |
| Min Operating Temperature | 0°C |
| Max Supply Voltage | 1.575V |
| Min Supply Voltage | 1.425V |
| Mount | Surface Mount |
| Nominal Supply Current | 135mA |
| Operating Supply Voltage | 1.5V |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
