This 78-pin DDR DRAM IC from Samsung operates within a temperature range of 0 to 85°C and requires a supply voltage between 1.2825V and 1.45V. The device is packaged in a TFBGA and features a single port. It is designed for use in memory applications and is classified as a DDR DRAM memory IC.
Quick Jump:
Technical Specifications
Samsung K4B2G0446C-HYH9 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 78 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B78 |
| Width | 7.5 |
| Length | 11 |
| Pin Count | 78 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.35 |
| Supply Voltage-Max (Vsup) | 1.45 |
| Supply Voltage-Min (Vsup) | 1.2825 |
| Number of Words | 536870912 |
| Number of Words Code | 512000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8542.32.00.36 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4B2G0446C-HYH9 Datasheet
Download the complete datasheet for Samsung K4B2G0446C-HYH9 to view detailed technical specifications.
No datasheet is available for this part.